BLF2425M7L(S)140 Datasheet - NXP Semiconductors.

With nearly a decade of leadership expertise in the industrial, scientif c and medical (ISM) market, NXP has now created the industry’s f rst dedicated and complete RF power transistor portfolio for the 2.45 GHz ISM band. The ISM 2.45 GHz LDMOS power transistor portfolio meets the need for improved eff ciency made possible by the latest LDMOS technology generations. The portfolio has three different f nal stage devices to cater for different power levels and a 12 W driver, all assembled in industry standard ceramic packages.

KEY FEATUREs
► A full range of output power levels from 12 W to 250 W continuous wave
► Best-in-class eff ciencies, all f nal stage device have eff ciencies in excess of 50%
► Field-proven ruggedness and long-term reliability
► The ability to drive variable load impedances
► All products use thermally enhanced packages

Key applications
► Solid state cooking
► RF lighting
► RF plasma generation
► RF heating
► RF drying