BD250C Datasheet - New Jersey Semiconductor
MFG CO.

New Jersey Semiconductor
DESCRIPTION
• Collector Current -lc= -25A
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -45V(Min)- BD250; -60V(Min)- BD250A
-80V(Min)- BD250B; -100V(Min)- BD250C
• Complement to Type BD249/A/B/C
APPLICATIONS
• Designed for use in general purpose power amplifier and
switching applications
Part Name
Description
View
MFG CO.
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor