AM29LV640MB100RPCF Datasheet - Advanced Micro Devices

GENERAL DESCRIPTION
   The Am29LV640MT/B is a 64 Mbit, 3.0 volt single power supply flash memory device organized as 4,194,304 words or 8,388,608 bytes. The device has an 8-bit/16-bit bus and can be programmed either in the host system or in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
◾ Single power supply operation
   — 3 V for read, erase, and program operations
◾ Manufactured on 0.23 µm MirrorBit process
   technology
◾ SecSi™ (Secured Silicon) Sector region
   — 128-word/256-byte sector for permanent, secure
      identification through an 8-word/16-byte random
      Electronic Serial Number, accessible through a
      command sequence
   — May be programmed and locked at the factory or by
      the customer
◾ Flexible sector architecture
   — One hundred twenty-seven 32 Kword/64-Kbyte
      sectors
   — Eight 4 Kword/8 Kbyte boot sectors
◾ Compatibility with JEDEC standards
   — Provides pinout and software compatibility for
      single-power supply flash, and superior inadvertent
      write protection
◾ Minimum 100,000 erase cycle guarantee per sector
◾ 20-year data retention at 125°C

PERFORMANCE CHARACTERISTICS
◾ High performance
   — 90 ns access time
   — 25 ns page read times
   — 0.5 s typical sector erase time
   — 22 µs typical effective write buffer word programming
      time: 16-word/32-byte write buffer reduces overall
      programming time for multiple-word/byte updates
   — 4-word/8-byte page read buffer
   — 16-word/32-byte write buffer
◾ Low power consumption (typical values at 3.0 V, 5
   MHz)
   — 30 mA typical active read current
   — 50 mA typical erase/program current
   — 1 µA typical standby mode current
◾ Package options
   — 48-pin TSOP
   — 63-ball Fine-pitch BGA
   — 64-ball Fortified BGA