AM29DL162C Datasheet - Advanced Micro Devices

GENERAL DESCRIPTION
   The Am29DL16xC family consists of 16 megabit, 3.0 volt-only flash memory devices, organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. Word mode data appears on DQ0–DQ15; byte mode data appears on DQ0–DQ7. The device is designed to be programmed in-system with the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
◾ Simultaneous Read/Write operations
   — Data can be continuously read from one bank while
      executing erase/program functions in other bank
   — Zero latency between read and write operations
◾ Multiple bank architectures
   — Three devices available with different bank sizes (refer
      to Table 2)
◾ Secured Silicon (SecSi) Sector: Extra 64 KByte sector
   — Factory locked and identifiable: 16 bytes available for
      secure, random factory Electronic Serial Number;
      verifiable as factory locked through autoselect
      function. ExpressFlash option allows entire sector to
      be available for factory-secured data
   — Customer lockable: Can be read, programmed, or
      erased just like other sectors. Once locked, data
      cannot be changed
◾ Zero Power Operation
   — Sophisticated power management circuits reduce
      power consumed during inactive periods to nearly
      zero
◾ Package options
   — 48-ball FBGA
   — 56-pin SSOP
   — 48-pin TSOP
◾ Top or bottom boot block
◾ Manufactured on 0.32 µm process technology
◾ Compatible with JEDEC standards
   — Pinout and software compatible with
      single-power-supply flash standard

PERFORMANCE CHARACTERISTICS
◾ High performance
   — Access time as fast 70 ns
   — Program time: 7 µs/word typical utilizing Accelerate function
◾ Ultra low power consumption (typical values)
   — 2 mA active read current at 1 MHz
   — 10 mA active read current at 5 MHz
   — 200 nA in standby or automatic sleep mode
◾ Minimum 1 million write cycles guaranteed per sector
◾ 20 Year data retention at 125°C
   — Reliable operation for the life of the system