Description
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of STs well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
FEATUREs
■ 100% avalanche tested
■ Very low intrinsic capacitances
Part Name
Description
View
MFG CO.
N-channel 600 V, 1.76 ?, 4 A SuperMESH? Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP
STMicroelectronics
N-channel 600 V - 1.76 ? - 4 A SuperMESH? Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP
STMicroelectronics
N-channel 600 V, 0.37 ?, 10 A MDmesh? II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK
STMicroelectronics
N-channel 600 V - 0.37 ?- 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh? Power MOSFET ( Rev : 2008 )
STMicroelectronics
N-channel 600 V, 0.37 ?, 10 A, FDmesh? II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
STMicroelectronics
N-channel 55 V, 6.5 m?, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET? III Power MOSFET
STMicroelectronics
N-channel 600 V, 0.85 ?, 4.6 A MDmesh? II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK
STMicroelectronics
N-channel 600 V, 0.56 ?,7 A MDmesh? II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK
STMicroelectronics
N-channel 620 V, 2.2 ? , 2.7 A SuperMESH3? Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK ( Rev : 2009 )
STMicroelectronics
N-channel 620 V, 2.2 ? , 2.7 A SuperMESH3? Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK
STMicroelectronics