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2SD526 PDF
2SD526 Datasheet - Shenzhen SPTECH Microelectronics Co., Ltd.
MFG CO.

Shenzhen SPTECH Microelectronics Co., Ltd.
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min)
• Good Linearity of hFE
• Collector Power Dissipation- : PC= 30W(Max)@ TC= 25℃
• Complement to Type 2SB596
APPLICATIONS
• Designed for power amplifier applications.
• Recommended for 20~25W high fidelity audio frequency amplifier output stage applications.
Part Name
Description
View
MFG CO.
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
Tiger Electronic
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor