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2SD1296 PDF
2SD1296 Datasheet - Shenzhen SPTECH Microelectronics Co., Ltd.
MFG CO.

Shenzhen SPTECH Microelectronics Co., Ltd.
DESCRIPTION
• High DC Current Gain : hFE= 1000(Min.)@ IC= 15A, VCE= 2V
• High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min)
• Low Collector Saturation Voltage
APPLICATIONS
• Designed for audio frequency power amplifier and low speed high current switching industrial applications.
Part Name
Description
View
MFG CO.
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor