Part Name
2SD1047
Other PDF
no available.
PDF
page
10 Pages
File Size
169.2 kB
MFG CO.
STMicroelectronics
2SD1047 Datasheet - STMicroelectronics
STMicroelectronics
Description
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
FEATUREs
■ High breakdown voltage VCEO = 140 V
■ Typical ft = 20 MHz
■ Fully characterized at 125 °C
APPLICATION
■ Power supply
Part Name
Description
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MFG CO.
High power NPN epitaxial planar bipolar transistor ( Rev : 2008_11 )
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