2SC4881 Datasheet - New Jersey Semiconductor

DESCRIPTION
·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 50V(Min)
·High Switching Speed
·Low Collector Saturation Voltage-: VCE(sat)= 0.4V(Max)@ (IC= 2.5A, IB= 125mA)

APPLICATIONS
·Designed for high current switching applications.