2SC3281 Datasheet - New Jersey Semiconductor
MFG CO.

New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Mm)
• Collector-Emitter SaturationVoltage-
: VCE(sat)= 3.0V(Max)@ lc= 10A, IB= 1A
• High Power Dissipation
APPLICATIONS
• Power amplifier applications
• Recommend for 100W high fidelity audio frequency
amplifier output stage applications
Part Name
Description
View
MFG CO.
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
Tiger Electronic
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor