2SC3265O Datasheet - Toshiba
MFG CO.

Toshiba
Low Frequency Power Amplifier Applications
Power Switching Applications
• High DC current gain: hFE (1) = 100~320
• Low saturation voltage: VCE (sat) = 0.4 V (max)
(IC = 500 mA, IB = 20 mA)
• Complementary to 2SA1298
Part Name
Description
View
MFG CO.
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) ( Rev : 2001 )
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