2SC3144 Datasheet - New Jersey Semiconductor
MFG CO.

New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min)
• High DC Current Gain : hFE=2000(Min)@lc=1.5A
• Wide Area of Safe Operation
• Complement to Type 2SA1258
APPLICATIONS
• Designed for high-speed drivers applications.
Part Name
Description
View
MFG CO.
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor