2SC3102 Datasheet - New Jersey Semiconductor
MFG CO.
New Jersey Semiconductor
DESCRIPTION
2SC3102 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers applications in UHF band.
APPLICATIONS
For output stage of 50W power amplifiers in UHF band.
Part Name
Description
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MFG CO.
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
Mitsumi
NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)
Mitsumi
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
Mitsumi
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
MITSUBISHI ELECTRIC
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
Mitsumi
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
MITSUBISHI ELECTRIC
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
Mitsumi
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
MITSUBISHI ELECTRIC
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
MITSUBISHI ELECTRIC
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
MITSUBISHI ELECTRIC
