2N6769 Datasheet - New Jersey Semiconductor

Description
These devices are n-channel, enchancement mode, power MOSFETs designed especially for high power, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers.

• VGS Rated at ±20 V
• Silicon Gate for Fast Switching Speeds
• IDSS, VDS(on), SOA and VGS(th) Specified at Elevated Temperature
• Rugged