2N6109_ Datasheet - New Jersey Semiconductor

Complementary Silicon Plastic Power Transistors

These devices are designed for use in general−purpose amplifier and switching applications.

FEATUREs
• DC Current Gain Specified to 7.0 Amperes
    hFE = 30−150 @ IC
           = 3.0 Adc − 2N6111, 2N6288
           = 2.3 (Min) @ IC = 7.0 Adc − All Devices
• Collector−Emitter Sustaining Voltage −
    VCEO(sus) = 30 Vdc (Min) − 2N6111, 2N6288
                       = 50 Vdc (Min) − 2N6109
                       = 70 Vdc (Min) − 2N6107, 2N6292
• High Current Gain − Bandwidth Product
    fT = 4.0 MHz (Min) @ IC = 500 mAdc − 2N6288, 90, 92
        = 10 MHz (Min) @ IC = 500 mAdc − 2N6107, 09, 11
• TO−220AB Compact Package
• Pb−Free Packages are Available*