Description
FDmesh™ technology combines the MDmesh™ features with an intrinsic fast-recovery body diode. The resulting product has reduced on resistance and fast switching commutations, making it especially suitable for bridge topologies where low trr is required.
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATION
■ Switching applications
Part Name
Description
View
MFG CO.
N-channel 500 V, 0.29 ?, 11 A MDmesh? II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO220FP
STMicroelectronics
N-channel 600 V, 0.32 ? typ., 11 A, FDmesh? II Power MOSFET (with fast diode) in DPAK, TO-220FP and TO-220 packages
STMicroelectronics
N-channel 500 V, 0.53 ?, 7 A DPAK, TO-220FP, TO-220 MDmesh? II Power MOSFET
STMicroelectronics
N-channel 500 V, 0.4 ?, 8.5 A MDmesh? II Power MOSFET in DPAK, TO-220FP and TO-220
STMicroelectronics
N-channel 600 V, 0.28 ?, 11 A MDmesh? II Power MOSFET in TO-220FP
STMicroelectronics
N-channel 500 V, 0.22 ?, 20 A D2PAK, TO-220FP, TO-220 FDmesh? Power MOSFET (with fast diode)
STMicroelectronics
N-channel 600 V, 0.13 ?, 21 A FDmesh? II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220, TO-247 ( Rev : 2011 )
STMicroelectronics
N-channel 600 V, 0.85 ?, 4.6 A MDmesh? II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK
STMicroelectronics
N-channel 600 V, 0.57 ?, 8 A, DPAK, TO-220FP, TO-220 FDmesh? II Power MOSFET (with fast diode)
STMicroelectronics
N-channel 650 V, 0.425 ?typ., 11 A MDmesh?II Power MOSFET in DPAK, TO-220FP, IPAKFP and TO-220 packages
STMicroelectronics