AT89C51CC03C-RLTIM View Datasheet(PDF) - Atmel Corporation

Part Name

Description

MFG CO.

AT89C51CC03C-RLTIM

Enhanced 8-bit MCU with CAN Controller and Flash Memory

Atmel Corporation 

Program/Code

Memory

AT89C51CC03

The AT89C51CC03 implement 64K Bytes of on-chip program/code memory. Figure 20

shows the partitioning of internal and external program/code memory spaces depending

on the product.

The Flash memory increases EPROM and ROM functionality by in-circuit electrical era-

sure and programming. Thanks to the internal charge pump, the high voltage needed for

programming or erasing Flash cells is generated on-chip using the standard VDD volt-

age. Thus, the Flash Memory can be programmed using only one voltage and allows In-

System Programming commonly known as ISP. Hardware programming mode is also

available using specific programming tool.

Figure 20. Program/Code Memory Organization

FFFFh

0000h

64K Bytes

internal

Flash

EA = 1

FFFFh

0000h

64K Bytes

external

memory

EA = 0

41

4182K–CAN–05/06

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