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C8051F521-C-IM View Datasheet(PDF) - Silicon Laboratories

Part Name
Description
MFG CO.
C8051F521-C-IM
Silabs
Silicon Laboratories 
C8051F521-C-IM Datasheet PDF : 221 Pages
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C8051F52x/F53x
Table 2.11. Internal Oscillator Electrical Characteristics
VDD = 1.8 to 2.75 V, –40 to +125 °C unless otherwise specified; Using factory-calibrated settings.
Parameter
Oscillator Frequency1
Conditions
IFCN = 111b
VDD > VREGMIN2
Min
Typ
Max
24.5 – 0.5% 24.53 24.5 + 0.5%
IFCN = 111b
VDD < VREGMIN2
Oscillator On
OSCICN[7:6] = 11b
Oscillator Suspend
OSCICN[7:6] = 00b
ZTCEN = 1
24.5 – 1.0% 24.53 24.5 + 1.0%
800
1100
Units
MHz
µA
Oscillator Supply Current
(from VDD)
T = 25 °C
T = 85 °C
T = 125 °C
Oscillator Suspend
OSCICN[7:6] = 00b
ZTCEN = 0
67
µA
77
µA
117
300
µA
T = 25 °C
T = 85 °C
2
µA
3
µA
T = 125 °C
50
µA
Wake-Up Time From Sus- OSCICN[7:6] = 00b
1
µs
pend
ZTCEN = 04
OSCICN[7:6] = 00b
ZTCEN = 1
5
Instruction
Cycles
Power Supply Sensitivity Constant Temperature
0.10
%/V
Temperature Sensitivity5 Constant Supply
TC1
5.0
ppm/°C
TC2
–0.65
ppm/°C2
Notes:
1. See Section “11.2.1. VDD Monitor Thresholds and Minimum VDD” on page 108 for minimum VDD
requirements.
2. VREGMIN is the minimum output of the voltage regulator for its low setting (REG0CN: REG0MD = 0b). See
Table 2.6, “Voltage Regulator Electrical Specifications,” on page 30.
3. This is the average frequency across the operating temperature range.
4. See “20.7. Internal Oscillator Suspend Mode” on page 212 for ZTCEN setting in older silicon revisions.
5. Use temperature coefficients TC1 and TC2 to calculate the new internal oscillator frequency using the
following equation:
f(T) = f0 x (1 + TC1 x (T – T0) + TC2 x (T – T0)2)
where f0 is the internal oscillator frequency at 25 °C and T0 is 25 °C.
34
Rev. 1.4

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