SST39VF1602C-70-4C-MAKE View Datasheet(PDF) - Silicon Storage Technology

Part Name

Description

MFG CO.

SST39VF1602C-70-4C-MAKE

16 Mbit (x16) Multi-Purpose Flash Plus

Silicon Storage Technology 

A Microchip Technology Company

16 Mbit Multi-Purpose Flash Plus

SST39VF1601C / SST39VF1602C

Data Sheet

Table 14:Recommended System Power-up Timings

Symbol

Parameter

Minimum

Units

TPU-READ1

Power-up to Read Operation

100

µs

TPU-WRITE1

Power-up to Program/Erase Operation

100

µs

T14.0 25018

1. This parameter is measured only for initial qualification and after a design or process change that could affect this

parameter.

Table 15:Capacitance (TA = 25°C, f=1 Mhz, other pins open)

Parameter Description

Test Condition Maximum

CI/O1

CIN1

I/O Pin Capacitance

Input Capacitance

VI/O = 0V

VIN = 0V

12 pF

6 pF

T15.0 25018

1. This parameter is measured only for initial qualification and after a design or process change that could affect this

parameter.

Table 16:Reliability Characteristics

Symbol

Parameter

Minimum Specification Units

Test Method

NEND1,2

Endurance

10,000

Cycles JEDEC Standard A117

TDR1

Data Retention

100

Years JEDEC Standard A103

ILTH1

Latch Up

100 + IDD

mA

JEDEC Standard 78

T16.2 25018

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

2. NEND endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would

result in a higher minimum specification.

©2011 Silicon Storage Technology, Inc.

19

DS-25018A

05/11

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