SST39VF1602C-70-4C-MAKE View Datasheet(PDF) - Silicon Storage Technology
Part Name
Description
MFG CO.
SST39VF1602C-70-4C-MAKE Datasheet PDF : 39 Pages
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A Microchip Technology Company
16 Mbit Multi-Purpose Flash Plus
SST39VF1601C / SST39VF1602C
Data Sheet
Power Up Specifications
All functionalities and DC specifications are specified for a VDD ramp rate of greater than 1V per 100
ms (0V to 3V in less than 300 ms). If the VDD ramp rate is slower than 1V per 100 ms, a hardware
reset is required. The recommended VDD power-up to RESET# high time should be greater than 100
µs to ensure a proper reset.
VDD
RESET#
TPU-READ 10 0 µs
VDD min
0V
VIH
CE#
TRHR 50 ns
Figure 5: Power-Up Diagram
1380 F24.0
Table 13:DC Operating Characteristics VDD = 2.7-3.6V1
Limits
Symbol Parameter
IDD
Power Supply Current
Read3
Min
Max Units Test Conditions
Address input=VILT/VIHT2, at f=5 MHz,
VDD=VDD Max
18
mA CE#=VIL, OE#=WE#=VIH, all I/Os
open
Program and Erase
35
mA CE#=WE#=VIL, OE#=VIH
ISB
Standby VDD Current
20
µA
CE#=VIHC, VDD=VDD Max
IALP
Auto Low Power
20
µA
CE#=VILC, VDD=VDD Max
All inputs=VSS or VDD, WE#=VIHC
ILI
Input Leakage Current
1
µA
VIN=GND to VDD, VDD=VDD Max
ILIW
Input Leakage Current
on WP# pin and RST#
10
µA WP#=GND to VDD or RST#=GND to
VDD
ILO
Output Leakage Current
10
µA
VOUT=GND to VDD, VDD=VDD Max
VIL
Input Low Voltage
0.8
V
VDD=VDD Min
VILC
Input Low Voltage (CMOS)
0.3
V
VDD=VDD Max
VIH
Input High Voltage
0.7VDD
V
VDD=VDD Max
VIHC Input High Voltage (CMOS) VDD-0.3
V
VDD=VDD Max
VOL
Output Low Voltage
0.2
V
IOL=100 µA, VDD=VDD Min
VOH
Output High Voltage
VDD-0.2
V
IOH=-100 µA, VDD=VDD Min
T13.8 25018
1. Typical conditions for the Active Current shown on the front page of the data sheet are average values at 25°C
(room temperature), and VDD = 3V. Not 100% tested.
2. See Figure 20
3. The IDD current listed is typically less than 2mA/MHz, with OE# at VIH. Typical VDD is 3V.
©2011 Silicon Storage Technology, Inc.
18
DS-25018A
05/11
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