TMMDB3 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

TMMDB3

DIAC

STMicroelectronics 

Diagram 1: Voltage - current characteristic curve. Diagram 2: Test circuit.

10 kΩ 500 kΩ D.U.T Rs=0

TMMDB3

+ IF

10mA

220 V

C=0.1µF

50 Hz

Vo

I

P

T410

R=20 Ω

IB O

-V

IR

+V

Diagram 3: Rise time measurement.

0,5 VBO

V

lp

VF

VB O

90 %

- IF

10 %

tr

Fig. 1: Relative variation of VBO versus junction

temperature (typical values)

VBO [Tj]

VBO [Tj = 25°C]

1.08

1.06

1.04

1.02

1.00

25

Tj (°C)

50

75

100

125

Fig. 2: Repetitive peak pulse current versus pulse

duration (maximum values).

ITRM(A)

20.0

10.0

F=120Hz

Tj initial=25°C

1.0

0.1

1

tp(µs)

10

100

3/4

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