TMMDB3 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

TMMDB3

DIAC

STMicroelectronics 

TMMDB3

ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)

Symbol

Parameter

Test Conditions

VBO

Breakover voltage *

I VBO1 - VBO2 I Breakover voltage

symmetry

∆V

Dynamic breakover

voltage *

VO

Output voltage *

IBO

Breakover current *

tr

Rise time *

IR

Leakage current *

* Applicable to both forward and reverse directions.

** Connected in parallel to the device.

C = 22nF **

C = 22nF **

VBO and VF at

10mA

see diagram 2

(R=20Ω)

C = 22nF **

see diagram 3

VR = 0.5 VBO max

MIN.

TYP.

MAX.

MAX.

MIN.

MIN.

MAX.

MAX.

MAX.

Value

Unit

28

V

32

36

±3

V

5

V

5

V

50

µA

2

µs

10

µA

ORDERING INFORMATION

TMM DB 3

MINIMELF

Diac Series

Breakover voltage

3: VBO typ = 32V

OTHER INFORMATION

Part Number

Marking

TMMDB3

(None)

Weight

0.04 g

Base Quantity

2500

Packing Mode

Tape & Reel

2/4

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