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STM32F030RCP6TR View Datasheet(PDF) - STMicroelectronics

Part Name
Description
MFG CO.
STM32F030RCP6TR Datasheet PDF : 91 Pages
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Electrical characteristics
STM32F030x4/x6/x8/xC
The software flowchart must include the management of runaway conditions such as:
Corrupted program counter
Unexpected reset
Critical Data corruption (control registers...)
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
Table 42. EMI characteristics
Symbol Parameter
Conditions
Monitored
frequency band
Max vs. [fHSE/fHCLK]
8/48 MHz
Unit
0.1 to 30 MHz
-3
SEMI
Peak level
VDD = 3.6 V, TA = 25 °C,
LQFP100 package
30 to 130 MHz
compliant with
130 MHz to 1 GHz
23
17
dBµV
IEC 61967-2
EMI Level
4
-
6.3.12
Electrical sensitivity characteristics
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
58/91
DocID024849 Rev 3

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