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SST34HF1622C-70-4C-L1SE View Datasheet(PDF) - Silicon Storage Technology

Part Name
Description
MFG CO.
SST34HF1622C-70-4C-L1SE
SST
Silicon Storage Technology 
SST34HF1622C-70-4C-L1SE Datasheet PDF : 38 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
SST34HF1602C / SST34HF1622C / SST34HF1642C
SST34HF1642D / SST34HF1682D / SST34HF1622S / SST34HF1642S
Advance Information
ADDRESSES AMSS-0
BES1#
TRCS
TAAS
TBES
TOHS
BES2
TBES
OE#
TBLZS
TOES
TOLZS
TBHZS
TOHZS
UBS#, LBS#
TBYLZS
TBYES
TBYHZS
DQ15-0
DATA VALID
1256 F04.0
Note: AMSS = Most Significant Address
AMSS = A16 for SST34HF1622C/S, A17 for SST34HF1622C/D/S, and A18 for SST34HF1682D
For SST34HF16x2S, LBS# and UBS# are No Connect and in x8 mode, the additional SRAM address is SA.
FIGURE 5: (P)SRAM READ CYCLE TIMING DIAGRAM
ADDRESSES AMSS3-0
WE#
BES1#
TASTS
TAWS
TWCS
TWPS
TBWS
TWRS
BES2
TBWS
UBS#, LBS#
DQ15-8, DQ7-0
TODWS
NOTE 2
TBYWS
TDSS
TOEWS
TDHS
VALID DATA IN
NOTE 2
1256 F05.0
Note: 1. If OE# is High during the Write cycle, the outputs will remain at high impedance.
2. If BES1# goes Low or BES2 goes high coincident with or after WE# goes Low, the output will remain at high impedance.
If BES1# goes High or BES2 goes low coincident with or before WE# goes High, the output will remain at high impedance.
Because DIN signals may be in the output state at this time, input signals of reverse polarity must not be applied.
3. AMSS = Most Significant SRAM Address
AMSS = A16 for SST34HF1622C/S, A17 for SST34HF1622C/D/S, and A18 for SST34HF1682D
For SST34HF16x2S, LBS# and UBS# are No Connect and in x8 mode, the additional SRAM address is SA.
FIGURE 6: (P)SRAM WRITE CYCLE TIMING DIAGRAM (WE# CONTROLLED)1
©2004 Silicon Storage Technology, Inc.
20
S71256-00-000
3/04

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