SST34HF1622C-70-4C-L1SE View Datasheet(PDF) - Silicon Storage Technology
Part Name
Description
MFG CO.
SST34HF1622C-70-4C-L1SE
Silicon Storage Technology
SST34HF1622C-70-4C-L1SE Datasheet PDF : 38 Pages
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16 Mbit Concurrent SuperFlash + 2/4/8 Mbit SRAM ComboMemory
SST34HF1602C / SST34HF1622C / SST34HF1642C
SST34HF1642D / SST34HF1682D / SST34HF1622S / SST34HF1642S
Advance Information
TABLE 8: DC OPERATING CHARACTERISTICS (VDD = VDDF AND VDDS = 2.7-3.3V)
Limits
Symbol Parameter
IDD1
Active VDD Current
Min Max
ISB
IRT
ILI
ILIW
ILO
VIL
VILC
VIH
VIHC
VOLF
VOHF
VOLS
VOHS
Read
Flash
(P)SRAM
Concurrent Operation
Write2
Flash
(P)SRAM
Standby VDD Current SRAM
PSRAM
Reset VDD Current
Input Leakage Current
Input Leakage Current
on WP# pin and RST# pin
Output Leakage Current
Input Low Voltage
Input Low Voltage (CMOS)
Input High Voltage
Input High Voltage (CMOS)
Flash Output Low Voltage
Flash Output High Voltage
(P)SRAM Output Low Voltage
(P)SRAM Output High Voltage
35
30
60
40
30
30
85
30
1
10
10
0.8
0.3
0.7 VDD
VDD-0.3
0.2
VDD-0.2
0.4
2.2
1. Address input = VILT/VIHT, VDD=VDD Max (See Figure 20)
2. IDD active while Erase or Program is in progress.
Units
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
Test Conditions
Address input = VILT/VIHT, at f=1/TRC Min,
VDD=VDD Max, all DQs open
OE#=VIL, WE#=VIH
BEF#=VIL, BES1#=VIH, or BES2=VIL
BEF#=VIH, BES1#=VIL , BES2=VIH
BEF#=VIH, BES1#=VIL , BES2=VIH
WE#=VIL
BEF#=VIL, BES1#=VIH, or BES2=VIL, OE#=VIH
BEF#=VIH, BES1#=VIL , BES2=VIH
VDD = VDD Max, BEF#=BES1#=VIHC, BES2=VILC
RST#=GND
VIN=GND to VDD, VDD=VDD Max
WP#=GND to VDD, VDD=VDD Max
RST#=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
VDD=VDD Min
VDD=VDD Max
VDD=VDD Max
VDD=VDD Max
IOL=100 µA, VDD=VDD Min
IOH=-100 µA, VDD=VDD Min
IOL =1 mA, VDD=VDD Min
IOH =-500 µA, VDD=VDD Min
T8.0 1256
©2004 Silicon Storage Technology, Inc.
16
S71256-00-000
3/04
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