SST32HF1641C-70-4C-LS View Datasheet(PDF) - Silicon Storage Technology
Part Name
Description
MFG CO.
SST32HF1641C-70-4C-LS Datasheet PDF : 36 Pages
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Multi-Purpose Flash Plus + SRAM ComboMemory
SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281
SST32HF1621C / SST32HF1641C / SST32HF3241C
Preliminary Specifications
TABLE 6: DC OPERATING CHARACTERISTICS (VDD = VDDF AND VDDS = 2.7-3.3V)
Limits
Symbol Parameter
Min Max Units Test Conditions
IDD
Active VDD Current
ISB
IRT
ILI
ILO
VIL
VILC
VIH
VIHC
VOLF
VOHF
VOLS
VOHS
Read
Flash
18
SRAM
30
Concurrent Operation
40
Write1
Flash
35
SRAM
30
Standby VDD Current SST32HFx1
110
SST32HFx1C
30
Reset VDD Current
30
Input Leakage Current
1
Output Leakage Current
10
Input Low Voltage
0.8
Input Low Voltage (CMOS)
0.3
Input High Voltage
Input High Voltage (CMOS)
0.7 VDD
VDD-0.3
Flash Output Low Voltage
0.2
Flash Output High Voltage
SRAM Output Low Voltage
VDD-0.2
0.4
SRAM Output High Voltage
2.2
1. IDD active while Erase or Program is in progress.
Address input = VILT/VIHT, at f=5 MHz,
VDD=VDD Max, all DQs open
OE#=VIL, WE#=VIH
mA BEF#=VIL, BES1#=VIH, or BES2=VIL
mA BEF#=VIH, BES1#=VIL , BES2=VIH
mA BEF#=VIH, BES1#=VIL , BES2=VIH
WE#=VIL
mA BEF#=VIL, BES1#=VIH, or BES2=VIL, OE#=VIH
mA BEF#=VIH, BES1#=VIL , BES2=VIH
µA VDD = VDD Max, BEF#=BES1#=VIHC, BES2=VILC
µA
µA Reset=VSS±0.3V
µA VIN=GND to VDD, VDD=VDD Max
µA VOUT=GND to VDD, VDD=VDD Max
V VDD=VDD Min
V VDD=VDD Max
V VDD=VDD Max
V VDD=VDD Max
V IOL=100 µA, VDD=VDD Min
V IOH=-100 µA, VDD=VDD Min
V IOL =1 mA, VDD=VDD Min
V IOH =-500 µA, VDD=VDD Min
T6.1 1236
TABLE 7: RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol
Parameter
Minimum
Units
TPU-READ1
TPU-WRITE1
Power-up to Read Operation
Power-up to Program/Erase Operation
100
µs
100
µs
T7.0 1236
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 8: CAPACITANCE (TA = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
Maximum
CI/O1
I/O Pin Capacitance
VI/O = 0V
12 pF
CIN1
Input Capacitance
VIN = 0V
12 pF
T8.0 1236
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 9: FLASH RELIABILITY CHARACTERISTICS
Symbol
Parameter
Minimum Specification Units Test Method
NEND1
Endurance
10,000
Cycles JEDEC Standard A117
TDR1
Data Retention
100
Years JEDEC Standard A103
ILTH1
Latch Up
100 + IDD
mA JEDEC Standard 78
T9.0 1236
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2005 Silicon Storage Technology, Inc.
12
S71236-04-000
5/05
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