Multi-Purpose Flash (MPF) + SRAM ComboMemory
SST32HF202 / SST32HF402 / SST32HF802
Data Sheet
TABLE 11: FLASH READ CYCLE TIMING PARAMETERS
Symbol Parameter
Min
Max
Units
TRC
Read Cycle Time
70
ns
TBE
Bank Enable Access Time
70
ns
TAA
Address Access Time
70
ns
TOE
TBLZ1
TOLZ1
TBHZ1
TOHZ1
TOH1
Output Enable Access Time
BEF# Low to Active Output
OE# Low to Active Output
BEF# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
35
ns
0
ns
0
ns
20
ns
20
ns
0
ns
T11.2 1209
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 12: FLASH PROGRAM/ERASE CYCLE TIMING PARAMETERS
Symbol
TBP
TAS
TAH
TBS
TBH
TOES
TOEH
TBPW
TWP
TWPH
TBPH
TDS
TDH
TIDA
TSE
TBE
TSCE
Parameter
Word-Program Time
Address Setup Time
Address Hold Time
WE# and BEF# Setup Time
WE# and BEF# Hold Time
OE# High Setup Time
OE# High Hold Time
BEF# Pulse Width
WE# Pulse Width
WE# Pulse Width High
BEF# Pulse Width High
Data Setup Time
Data Hold Time
Software ID Access and Exit Time
Sector-Erase
Block-Erase
Chip-Erase
Min
Max
Units
20
µs
0
ns
30
ns
0
ns
0
ns
0
ns
10
ns
40
ns
40
ns
30
ns
30
ns
30
ns
0
ns
150
ns
25
ms
25
ms
100
ms
T12.0 1209
©2005 Silicon Storage Technology, Inc.
12
S71209-06-000
5/05