C8051F98X View Datasheet(PDF) - Silicon Laboratories

Part Name

Description

MFG CO.

C8051F98X

Ultra Low Power, 8-2 kB Flash, Capacitive Sensing MCU

Silicon Laboratories 

C8051F99x-C8051F98x

Table 4.5. Power Management Electrical Specifications

VDD = 1.8 to 3.6 V, –40 to +85 °C unless otherwise specified.

Parameter

Conditions

Min Typ

Idle Mode Wake-up Time

2

—

Suspend Mode Wake-up Time

CLKDIV = 0x00

—

400

Low Power or Precision Osc.

Sleep Mode Wake-up Time

—

2

Max

Units

3 SYSCLKs

—

ns

—

µs

Table 4.6. Flash Electrical Characteristics

VDD = 1.8 to 3.6 V, –40 to +85 °C unless otherwise specified.

Parameter

Flash Size

Conditions

C8051F980/1/6/7, C8051F990/1/6/7

C8051F982/3/8/9

C8051F985

Endurance

Erase Cycle Time

Write Cycle Time

Min

8192

4096

2048

20 k

28

57

Typ

—

—

—

100k

32

64

Max

Units

—

bytes

—

bytes

—

bytes

—

Erase/Write

Cycles

36

ms

71

µs

Table 4.7. Internal Precision Oscillator Electrical Characteristics

VDD = 1.8 to 3.6 V; TA = –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.

Parameter

Conditions

Min

Typ

Max

Oscillator Frequency

–40 to +85 °C,

VDD = 1.8–3.6 V

24

24.5

25

Oscillator Supply Current 

(from VDD)

25 °C; includes bias current

of 90–100 µA

—

300*

—

*Note: Does not include clock divider or clock tree supply current.

Units

MHz

µA

Table 4.8. Internal Low-Power Oscillator Electrical Characteristics

VDD = 1.8 to 3.6 V; TA = –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.

Parameter

Conditions

Min

Typ

Max

Oscillator Frequency

–40 to +85 °C,

VDD = 1.8–3.6 V

18

20

22

Oscillator Supply Current 

25 °C

(from VDD)

No separate bias current

—

100*

—

required

*Note: Does not include clock divider or clock tree supply current.

Units

MHz

µA

56

Rev. 1.0

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