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C8051T603-GS(2007) View Datasheet(PDF) - Silicon Laboratories

Part Name
Description
MFG CO.
C8051T603-GS
(Rev.:2007)
Silabs
Silicon Laboratories 
C8051T603-GS Datasheet PDF : 168 Pages
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C8051T600/1/2/3/4/5
2. Absolute Maximum Ratings
Table 2.1. Absolute Maximum Ratings*
Parameter
Conditions
Ambient temperature under bias
Storage Temperature
Voltage on RST or any Port I/O Pin VDD > 2.2 V
(except VPP during programming) with VDD < 2.2 V
respect to GND
Voltage on VPP with respect to GND VDD > 2.4 V
during a programming operation
Duration of High-voltage on VPP pin
(cumulative)
VPP > (VDD + 3.6 V)
Voltage on VDD with respect to GND Regulator in Normal Mode
Regulator in Bypass Mode
Maximum Total current through VDD
and GND
Maximum output current sunk by RST
or any Port pin
Min
–55
–65
–0.3
–0.3
–0.3
–0.3
–0.3
Typ Max Units
125
°C
150
°C
5.8
V
— VDD + 3.6 V
7.0
V
10
s
4.2
V
1.98
V
500
mA
100
mA
*Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the devices at those or any other conditions
above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
Rev. 0.5
23

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