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STGP7NB120SD View Datasheet(PDF) - STMicroelectronics

Part Name
Description
MFG CO.
STGP7NB120SD
ST-Microelectronics
STMicroelectronics 
STGP7NB120SD Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING OFF
Symbol
Parameter
Test Conditions
tc
tr(Voff)
Cross-over Time
Off Voltage Rise Time
Vcc = 960 V, IC = 7 A,
RGE = 1K, VGE = 15 V
tf
Fall Time
Eoff(**) Turn-off Switching Loss
tc
tr(Voff)
tf
Cross-over Time
Off Voltage Rise Time
Fall Time
Vcc = 960 V, IC = 7 A,
RGE = 1K, VGE = 15 V
Tj = 125 °C
Eoff(**) Turn-off Switching Loss
STGP7NB120SD
Min. Typ. Max. Unit
4.9
µs
2.9
µs
3.3
µs
15
mJ
7.5
µs
5.5
µs
6.2
µs
22
mJ
COLLECTOR-EMITTER DIODE
Symbol
Parameter
Test Conditions
If
Forward Current
Ifm
Forward Current pulsed
Vf
Forward On-Voltage
If =3.5 A
If = 3.5 A, Tj = 125 °C
trr
Reverse Recovery Time
If = 3.5 A ,VR = 600 V,
Qrr
Reverse Recovery Charge Tj =125°C, di/dt = 100A/µs
Irrm
Reverse Recovery Current
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
Min.
Typ.
1.7
1.5
190
850
9
Max. Unit
3.5
A
28
A
2.0
V
V
ns
nC
A
3/8

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