STGP7NB120SD View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STGP7NB120SD Datasheet PDF : 8 Pages
| |||
STGP7NB120SD
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Rthc-h Thermal Resistance Case-heatsink Typ
1.38
°C/W
62.5
°C/W
0.5
°C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
VBR(CES) Collector-Emitter Breakdown IC = 250 µA, VGE = 0
1200
V
Voltage
VBR(ECR) Emitter-Collector Breakdown IC = 10mA, VGE = 0
20
V
Voltage
ICES
Collector cut-off
(VGE = 0)
VCE = Max Rating, TC = 25 °C
VCE = Max Rating, TC = 125 °C
50
µA
250
µA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ±20V , VCE = 0
±100 nA
ON (1)
Symbol
VGE(th)
VCE(sat)
Parameter
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
Test Conditions
VCE = VGE, IC = 250µA
VGE = 15V, IC = 3.5 A
VGE = 15V, IC = 7 A
VGE = 15V, IC = 10 A
Min.
3
Typ.
1.7
Max. Unit
5
V
1.6
V
2.1
V
V
DYNAMIC
Symbol
gfs
Cies
Coes
Cres
Qg
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Charge
ICL
Latching Current
Test Conditions
VCE = 25 V , IC =7 A
VCE = 25V, f = 1 MHz, VGE = 0
Min.
2.5
VCE = 960V, IC = 7 A,
VGE = 15V
Vclamp = 960V , Tj = 150°C
10
RG = 1KΩ
Typ.
4.5
430
40
7
29
Max. Unit
S
pF
pF
pF
nC
A
SWITCHING ON
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
(di/dt)on
Eon
Turn-on Current Slope
Turn-on Switching Losses
Test Conditions
VCC = 960 V, IC = 7 A
RG = 1KΩ , VGE = 15 V
VCC= 960 V, IC = 7 A, RG=1KΩ
VGE = 15 V, Tj = 125°C
Min.
Typ.
570
270
800
3.2
Max.
Unit
ns
ns
A/µs
mJ
2/8
Share Link: 