LH28F800BGHE-TL12 View Datasheet(PDF) - Sharp Electronics

Part Name

Description

MFG CO.

LH28F800BGHE-TL12

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

Sharp Electronics 

LH28F800BG-L/BGH-L (FOR TSOP, CSP)

6.2.8 BLOCK ERASE AND WORD WRITE PERFORMANCE (NOTE 3, 4)

• VCC = 2.7 to 3.6 V, TA = 0 to +70˚C or –40 to +85˚C

SYMBOL

PARAMETER

VPP = 2.7 to 3.6 V

NOTE MIN. TYP.(NOTE 1) MAX.

32 k-Word

tWHQV1 Word Write Block

2

44.6

tEHQV1 Time

4 k-Word

Block

2

45.9

32 k-Word

Block Write Block

2

1.46

Time

4 k-Word

Block

2

0.19

32 k-Word

tWHQV2 Block Erase Block

2

1.14

tEHQV2 Time

4 k-Word

Block

2

0.38

tWHRH1 Word Write Suspend

tEHRH1 Latency Time to Read

7

8

tWHRH2 Erase Suspend Latency

tEHRH2 Time to Read

18 22

VPP = 5.0±0.5 V

MIN. TYP.(NOTE 1) MAX.

17.7

26.1

0.58

0.11

0.61

0.32

6

8

11 14

VPP = 12.0±0.6 V

MIN. TYP.(NOTE 1) MAX. UNIT

12.6

µs

24.5

µs

0.42

s

0.11

s

0.51

s

0.31

s

6

7 µs

11 14 µs

• VCC = 3.3±0.3 V, TA = 0 to +70˚C or –40 to +85˚C

SYMBOL

PARAMETER

VPP = 3.3±0.3 V

VPP = 5.0±0.5 V

VPP = 12.0±0.6 V

NOTE MIN. TYP.(NOTE 1) MAX. MIN. TYP.(NOTE 1) MAX. MIN. TYP.(NOTE 1) MAX. UNIT

32 k-Word

tWHQV1 Word Write Block

2

44

tEHQV1 Time

4 k-Word

Block

2

45

17.3

12.3

µs

25.6

24

µs

32 k-Word

Block Write Block

2

1.44

0.57

0.41

s

Time

4 k-Word

Block

2

0.19

0.11

0.1

s

32 k-Word

tWHQV2 Block Erase Block

2

1.11

0.59

tEHQV2 Time

4 k-Word

Block

2

0.37

0.31

0.5

s

0.3

s

tWHRH1

tEHRH1

tWHRH2

tEHRH2

Word Write Suspend

Latency Time to Read

Erase Suspend Latency

Time to Read

6

7

16.2 20

5

7

9.6 12

5

6 µs

9.6 12 µs

NOTES :

1. Typical values measured at TA = +25˚C and nominal

3. These performance numbers are valid for all speed

voltages. Subject to change based on device

versions.

characterization.

4. Sampled, not 100% tested.

2. Excludes system-level overhead.

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