LH28F800BGHE-TL12 View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
LH28F800BGHE-TL12 Datasheet PDF : 43 Pages
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LH28F800BG-L/BGH-L (FOR TSOP, CSP)
6.2.5 AC CHARACTERISTICS - WRITE OPERATIONS (contd.) (NOTE 1)
• VCC = 3.3±0.3 V, TA = 0 to +70˚C or –40 to +85˚C
VERSIONS
LH28F800BG-L85 LH28F800BG-L12
LH28F800BGH-L85 LH28F800BGH-L12 UNIT
SYMBOL
PARAMETER
tAVAV Write Cycle Time
tPHWL RP# High Recovery to WE# Going Low
tELWL CE# Setup to WE# Going Low
tWLWH WE# Pulse Width
tPHHWH RP# VHH Setup to WE# Going High
tSHWH WP# VIH Setup to WE# Going High
tVPWH VPP Setup to WE# Going High
tAVWH Address Setup to WE# Going High
tDVWH Data Setup to WE# Going High
tWHDX Data Hold from WE# High
tWHAX Address Hold from WE# High
tWHEH CE# Hold from WE# High
tWHWL WE# Pulse Width High
tWHRL WE# High to RY/BY# Going Low
tWHGL Write Recovery before Read
tQVVL VPP Hold from Valid SRD, RY/BY# High
tQVPH RP# VHH Hold from Valid SRD, RY/BY# High
tQVSL WP# VIH Hold from Valid SRD, RY/BY# High
NOTE
2
2
2
2
3
3
2, 4
2, 4
2, 4
MIN.
100
1
10
50
100
100
100
50
50
5
5
10
30
0
0
0
0
MAX.
100
MIN.
130
1
10
50
100
100
100
50
50
5
5
10
30
0
0
0
0
MAX.
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
100 ns
ns
ns
ns
ns
NOTES :
1. Read timing characteristics during block erase and word
write operations are the same as during read-only
operations. Refer to Section 6.2.4 "AC CHARAC-
TERISTICS" for read-only operations.
2. Sampled, not 100% tested.
3. Refer to Table 3 for valid AIN and DIN for block erase or
word write.
4. VPP should be held at VPPH1/2/3 (and if necessary RP#
should be held at VHH) until determination of block erase
or word write success (SR.1/3/4/5 = 0 : on Boot Blocks,
SR.3/4/5 = 0 : on Parameter Blocks and Main Blocks).
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