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FEATURES

High DC Current Gain

Low Saturation Voltage

High Power Dissipation

Package Outline, Tube Packing, Packaging and Handling Information

FEATURES

HIGH VOLTAGE CAPABILITY

HIGH SPEED SWITCHING

WIDE SOA

APPLICATION

FLUORESCENT LAMP

ELECTRONIC BALLAST

ELECTRONIC TRANSFORMER

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.

Features

• 5.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V

• Low gate charge ( typical 25 nC)

• Low Crss ( typical 20 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Part Number : STRW-6262, STRW6262
Function : Voltage Regulator
Package : TO 220-6 / ZIP Type
Manufacturers : Sanken

DESCRIPTION
The UTC HLB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications.

FEATURES
* High Speed Switching
* Low Saturation Voltage
* High Reliability

(T) TO-220 Package 3-Pin

• FEATURES
• Drain Current ID=3.0A@ TC=25℃
• Drain Source Voltage-
   : VDSS= 750V(Min)
• Static Drain-Source On-Resistance
   : RDS(on) = 7.0Ω (Max)
• Fast Switching

• APPLICATIONS
• Switching power supplies,converters,AC and DC motor controls

TRANSISTOR（ NPN ）

FEATURES
   Power dissipation
      PCM : 1.5 W（ Tamb=25℃）
   Collector current
      ICM: 4 A
   Collector-base voltage
      V(BR)CBO : 700 V
   Operating and storage junction temperature range
      TJ， Tstg: -55℃ to +150℃

DESCRIPTION
The UTC HLB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications.

FEATURES
* High Speed Switching
* Low Saturation Voltage
* High Reliability