MS-212 Cylindrical Magnet Sensor Ultra-miniature, 2.5 mm Diameter x 12.0 mm, 10 W
✦ Does not require power for operation ✦ Omni-polar device; actuates with either pole of magnet ✦ Normally open (NO) contact ✦ Three magnetic sensitivity bands ✦ Various types of leads and connectors available ✦ Lead (Pb) free and RoHS compliant
Applications This magnet sensor is suitable for use in the following applications and many others: dentist drills, model airplanes, implantable devices, musical greeting cards...
Introduction The nRF24L01+ is a single chip 2.4GHz transceiver with an embedded baseband protocol engine (Enhanced ShockBurst™), suitable for ultra low power wireless applications. The nRF24L01+ is designed for operation in the world wide ISM frequency band at 2.400 - 2.4835GHz.
Key Features • Worldwide 2.4GHz ISM band operation • 250kbps, 1Mbps and 2Mbps on air data rates • Ultra low power operation • 11.3mA TX at 0dBm output power • 13.5mA RX at 2Mbps air data rate • 900nA in power down • 26µA in standby-I • On chip voltage Regulator • 1.9 to 3.6V supply range • Enhanced ShockBurst™ • Automatic packet handling • Auto packet transaction handling • 6 data pipe MultiCeiver™ • Drop-in compatibility with nRF24L01 • On-air compatible in 250kbps and 1Mbps with nRF2401A, nRF2402, nRF24E1 and nRF24E2 • Low cost BOM • ±60ppm 16MHz crystal • 5V tolerant inputs • Compact 20-pin 4x4mm QFN package
Applications • Wireless PC Peripherals • Mouse, keyboards and remotes • 3-in-1 desktop bundles • Advanced Media center remote controls • VoIP headsets • Game controllers • Sports watches and sensors • RF remote controls for consumer electronics • Home and commercial automation • Ultra low power sensor networks • Active RFID • Asset tracking systems • Toys
Description The AFM04P3-212, 213 are high performance power GaAs MESFET chips having a gate length of 0.25 µm and a total gate periphery of 400 µm. These devices have excellent gain and power performance through 26 GHz, making them suitable for a wide range of commercial and military applications in oscillator and amplifier circuits.
Features ■ Low Noise Figure, 0.6 dB @ 4 GHz ■ 20 dBm Output Power @ 18 GHz ■ High Associated Gain, 13 dB @ 4 GHz ■ High Power Added Efficiency, 25% ■ Broadband Operation, DC–26 GHz ■ Available in Tape and Reel Packaging
Description The AFM06P3-212, 213 are high performance power GaAs MESFET chips in an industry standard ceramic micro-x package, having a gate length of 0.25 µm and a total gate periphery of 600 µm. These devices have excellent gain and power performance through 26 GHz, making them suitable for a wide range of commercial and military applications in oscillator and amplifier circuits.
Features ■ 22 dBm Output Power @ 18 GHz ■ High Associated Gain, 9 dB @ 18 GHz ■ High Power Added Efficiency, 23% ■ Broadband Operation, DC–18 GHz ■ 0.25 µm Ti/Pd/Au Gates ■ Passivated Surface
GENERAL DESCRIPTION SM5212E is a RF remote control encoder paired with SM5212D. It utilizes CMOS technology. The chip has 12 bits of 2-state address pins that provides 212 codes. SM5212E/SM5212D pair is suitable for use on remote controller.
FEATURES * CMOS technology * Low power consumption * Wide range operating voltage, Vcc = 2.4~12V * Up to four data bits * High noise immunity
APPLICATION * Car Security * Garage Door * Ceiling Fan * Home Security/Automatic * Toys * Wireless doorbell
Ohmite power Tap Switches (high power rotary switches) are constructed to provide dependable, convenient operation. All Ohmite tap switches, from 15 to 100 amps, have ceramic arc-proof bodies and metal alloy contacts. Their all-soldered and all-riveted construction assures mechanical and operational integrity. Even the smallest Ohmite Tap Switch, rated at 7 amps, has a reinforced non-metal body and solid metal alloy contacts. These units feature high current handling capability in a small package.
FEATURES • “Slow-breaking, Quick-make” action proved best for switching AC current. • Non-shorting type disconnects previous circuit before establishing contact for succeeding tap. • Ceramic and metal construction provides resistance to arcing, burning and charring. • Tandem assemblies available as standard models. • UL listed for models 111, 212, 312 and 412 • RoHS compliant product available Jan. 2006 Add “E” suffix to part number to specify.
Description The AFP02N8-212, 213 are general purpose packaged PHEMT chips that have excellent gain and noise performance through X band, making them suitable for a wide range of commercial applications. The devices employ 0.7 µm Ti/Pd/Au gates and surface passivation to ensure a rugged, reliable part. Available in metal ceramic packages with a choice of two lead lengths. The components are also available in tape and reel and are ready for automatic insertion equipment.
Features ■ Low Noise Figure, 1.55 dB @ 4 GHz ■ High Associated Gain, 13 dB @ 4 GHz ■ High MAG, > 15 dB @ 4 GHz ■ 0.7 µm Ti/Pd/Au Gates ■ Passivated Surface ■ Low Cost Metal Ceramic Package ■ Available with Two Lead Lengths ■ Available in Tape and Reel Packaging