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Features
• Planar Die Construction
• 350mW Power Dissipation
• Zener Voltages from 2.4V - 51V
• Ideally Suited for Automated Assembly Processes

[FOSHAN]

BIPOLAR TRANSISTORS

TRANSISTOR (NPN)

FEATURES
    Power dissipation
       PCM: 0.15 W (Tamb=25℃)
    Collector current
       ICM: 0.2 A
    Collector-base voltage
       V(BR)CBO: 50 V
    Operating and storage junction temperature range
       TJ, Tstg: -55℃ to +150℃

A : MIN 0.90 MAX 1.40 A1 : MIN 0.00 MAX 0.15

Features
● Low noise and high gain.
   NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
● High power gain.
   MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

TRANSISTOR (NPN)

FEATURES
   Power dissipation
      PCM: 200 mW (Tamb=25℃)
   Collector current
      ICM: 0.025 A
   Collector-base voltage
      V(BR)CBO: 30 V
   Operating and storage junction temperature range
      TJ, Tstg: -55℃ to +150℃

TRANSISTOR（NPN）

FEATURES
   Power dissipation
      PCM : 0.3 W（ Tamb=25℃）
   Collector current
      ICM : 1.5 A
   Collector-base voltage
      V(BR)CBO : 40 V
   Operating and storage junction temperature range
      TJ， Tstg: -55℃ to +150℃

DIGITAL TRANSISTOR(NPN)

FEATURES
    Power dissipation PD:200 mW(Tamb=25℃)
    Collector current IC:100 mA

TRANSISTOR (NPN)
   
FEATURES
    Power dissipation
        PCM: 150 mW (Tamb=25℃)
    Collector current
        ICM: 20 mA
    Collector-base voltage
        V(BR)CBO: 40 V
    Operating and storage junction temperature range
        TJ, Tstg: -55℃ to +150℃
   

SWITCHING DIODE

FEATURES
    Power dissipation PD : 150 mW（ Tamb=25℃）
    Forward Current IF : 300 mA
    Reverse Voltage VR: 50 V
    Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃