NPN Silicon RF POWER TRANSISOTRS
50W - 3MHz RF POWER TRANSISTOR NPN Silicon
NPN Silicon RF POWER TRANSISOTRS
50W - 3MHz RF POWER TRANSISTOR NPN Silicon
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
Bipolar NPN Device.
VCEO = 100V
IC = 6A
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
Bipolar NPN Device.
VCEO = 100V
IC = 6A
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
Bipolar NPN Device.
VCEO = 100V
IC = 6A
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
Bipolar NPN Device.
VCEO = 100V
IC = 6A
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
Bipolar NPN Device.
VCEO = 100V
IC = 6A
Features
• low insertion loss, 0.3 dB typ.
• good isolation, 26 dB typ.
• up to 10W power input as splitter
• excellent amplitude unbalance, 0.1 dB typ.
• excellent phase unbalance, 1 deg. typ.
• excellent VSWR, 1.15:1 typ.
• rugged shielded case
Applications
• wireless
• defense
• communications
Bipolar NPN Device.
VCEO = 100V
IC = 6A
All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications.
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