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MOSFET drivers

Integrated discrete MOSFET drivers combine several discrete products into one package to offer MOSFET driving functionality. With a choice of configurations Philips offers solutions to take load from the driving circuit, improve the efficiency of the MOSFET and enable design flexibility.

Key features
- Complete MOSFET driving functionality in
   one package
- Several configurations available

Key benefits
- Improved MOSFET efficiency by
   • Minimizing rise and fall time
   • Fast gate (dis-)charge of the driven
      MOSFET
- Takes load from the driving circuit
   and thus minimizes the IC power dissipation
- More design flexibility: the control IC and
   the MOSFET do not have to be placed as
   close as possible anymore
- Cost-effective alternative to IC-solutions

Key applications
- MOSFET driver
- Bipolar power transistor driver
- Push-pull driver

MOSFET : N-Channel Silicon MOSFET
FRD : Ultrahigh-Speed Switching Diode

Features
• FET RDS(on)=5.8Ω (typ.), 10V drive
• FRD VF=1.1V (typ.), trr=40ns (typ.)
• Nch MOSFET+FRD

Power MOSFET(N-channel enhancement mode power MOSFET)

CR522X is a built-in electric high voltage power MOSFET Flow mode flyback PWM control chip for less than 18W Offline flyback switching power supply with high performance, low standby Power, low cost advantages.

* CR5223 built-in 630V MOSFET

* CR5224 built-in 630V MOSFET

* CR5228 built-in 650V MOSFET
 
* CR5229 built-in 650V MOSFET

MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode

Features
• Composite type with an N-channel silicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting.
• [MOSFET]
   • Low ON-resistance.
   • Ultrahigh-speed switching.
   • 4V drive.
• [SBD]
   • Short reverse recovery time.
   • Low forward voltage.

The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET

N-Channel Enhancement MOSFET

■ FEATURES
   TrenchFET Power MOSFET

Complementary MOSFET Half-Bridge (N- and P-Channel)

FEATURES
● TrenchFET Power MOSFET

P-Channel 40-V (D-S) MOSFET

FEATURES
• TrenchFET® Power MOSFET

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode

Features
• Composite type with an N-channel silicon MOSFET and a schottky barrier diode (SS10015M) contained in one package facilitating high-density mounting.

• [MOSFET]
    • Low ON-resistance.
    • 1.8V drive.

• [SBD]
    • Short reverse recovery time.
    • Low forward voltage.