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L2SA1365FLT1G 数据手册 ( 数据表 ) - Leshan Radio Company,Ltd

S-L2SA1365ELT1G image

零件编号
L2SA1365FLT1G

产品描述 (功能)

Other PDF
  no available.

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page
3 Pages

File Size
661 kB

生产厂家
LRC
Leshan Radio Company,Ltd 

DESCRIPTION
L2SA1365*LT1G is a mini packagesilicon PNP epitaxial transistor,
designed with high collector current and small VCE(sat).


FEATURE
● Small collector to emitter saturation voltage.
   VCE(sat)=-0.2V typ
● Excellent linearity of DC forward current gain.
● Super mini package for easy mounting
● We declare that the material of product compliance with RoHS requirements.
● We declare that the material of product is ROHS compliant
● High collector current I =-1A CM
● High gain band width product f =180MHz typ T
● S- Prefix for Automotive and Other Applications Requiring Unique Site
   and Control Change Requirements, AEC-Q101 Qualified and PPAP Capable.


APPLICATION
   Small type motor drive, relay drive, power supply.


零件编号
产品描述 (功能)
视图
生产厂家
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