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STB13NM50N-1(2007) 数据手册 ( 数据表 ) - STMicroelectronics

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零件编号
STB13NM50N-1

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17 Pages

File Size
615.9 kB

生产厂家
ST-Microelectronics
STMicroelectronics 

Description
This product is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters


FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance


APPLICATION
■ Switching application


零件编号
产品描述 (功能)
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生产厂家
N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh™ Power MOSFET ( Rev : 2007 )
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