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MPSU07
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New Jersey Semiconductor
MPSU07 数据手册 ( 数据表 ) - New Jersey Semiconductor
New Jersey Semiconductor
NPN SILICON ANNULAR AMPLIFIER TRANSISTOR
. . . designed for general-purpose, high-voltage amplifier and driver applications.
• High Collector-Emitter Breakdown Voltage —
BVCEO = 100 Adc (Min) @ IC = 1.0 mAdc
• High Power Dissipation - PD = 10W @ TC = 25°C
• Complement to PNP MPS-U57
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