MMZ25332B(2017) 数据手册 ( 数据表 ) - NXP Semiconductors.

Heterojunction Bipolar Transistor Technology (InGaP HBT)
High Efficiency/Linearity Amplifier

The MMZ25332B is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, WLAN (802.11g/n), W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W--CDMA air interfaces with an ACPR of –50 dBc at an output power of up to 22 dBm, covering frequencies from 1500 to 2800 MHz. It operates from a supply voltage of 3 to 5 V. The amplifier is fully input matched, requires minimal external matching on the output and is housed in a cost--effective, surface mount QFN 3 x 3 package. The device offers state--of--the--art reliability, ruggedness, temperature stability and ESD performance.

• Typical Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 400 mA

FEATUREs
• Frequency: 1500–2800 MHz
• P1dB: 33 dBm @ 2500 MHz
• Power gain: 26.5 dB @ 2500 MHz
• OIP3: 48 dBm @ 2500 MHz
• EVM ≤ 3% @ 23.5 dBm Pout, WLAN (802.11g)
• Active bias control (adjustable externally)
• Power down control via VBIAS pin
• Class 3A HBM ESD rating
• Single 3 to 5 V supply
• Single--ended power detector
• Cost--effective 12--pin, 3 mm QFN surface mount plastic package