MJD31C 数据手册 ( 数据表 ) - Inchange Semiconductor

DESCRIPTION
• DC Current Gain -hFE = 25(Min)@ IC= 1A
• Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min)
• Complement to Type MJD32C
• DPAK for Surface Mount Applications
• Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS
• Designed for use in general purpose amplifier and low speed switching applications.