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LS310 数据手册 ( 数据表 ) - New Jersey Semiconductor
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New Jersey Semiconductor
FEATURES
VERY HIGH GAIN hFE ≥ 200 @ 10µA-1mA
TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP.
HIGH fT 250MHz TYP. @ 1mA
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components
MONOLITHIC DUAL NPN TRANSISTOR
Micross Components