C565-30V 数据手册 ( 数据表 ) - Roithner LaserTechnik GmbH
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Roithner LaserTechnik GmbH
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1) Commodity Type and Physical Characteristics.
1. Material InGaAlP/GaAs
2. Electrode Top Side P (anode) side : Au Alloy/Au or Au Pad
Bottom Side N (cathode) side : Au Alloy
3. Electrode Pattern Fig.1
4. Chip Size Fig.2
5. Chip Thickness Fig.2
6. Emission Area Fig.2
SPECIFICATION OF LED CHIP
Roithner LaserTechnik GmbH
Specification of GaAlAs IR Emitting Diode Chip
Vishay Semiconductors
SPECIFICATION OF MODULE
Varitronix international limited
SPECIFICATION OF MODULE
Varitronix international limited
SPECIFICATION OF MODULE
Varitronix international limited
Specification of GaAlAs IR Emitting Diode Chip
Vishay Semiconductors
Specification of GaAlAs IR Emitting Diode Chip
Vishay Semiconductors
SPECIFICATION OF MODULE
Varitronix international limited
SPECIFICATION OF MODULE
Varitronix international limited
SPECIFICATION OF MODULE
Varitronix international limited