2SK2376(1998) 数据手册 ( 数据表 ) - Toshiba
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HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS
CHOPPER REGULATOR, DC−DC CONVERTER AND MOTOR DRIVE
APPLICATIONS
• 4V Gate Drive
• Low Drain−Source ON Resistance : RDS (ON) = 13 mΩ (Typ.)
• High Forward Transfer Admittance : |Yfs| = 40 S (Typ.)
• Low Leakage Current : IDSS = 100 μA (Max.) (VDS = 60 V)
• Enhancement-Mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV)
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV) ( Rev : 1999 )
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2010 )
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
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