2SK2370 数据手册 ( 数据表 ) - NEC => Renesas Technology
生产厂家
NEC => Renesas Technology
DESCRIPTION
The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.
FEATURES
• Low On-Resistance
2SK2369: RDS(on) = 0.35 Ω (VGS = 10 V, ID = 10 A)
2SK2370: RDS(on) = 0.4 Ω (VGS = 10 V, ID = 10 A)
• Low Ciss Ciss = 2400 pF TYP.
• High Avalanche Capability Ratings
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology