零件编号
2SB1361
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New Jersey Semiconductor
2SB1361 数据手册 ( 数据表 ) - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- :V(BR)CEo=-150V(Min)
• Wide Area of Safe Operation
• Complement to Type 2SD2052
APPLICATIONS
• Designed for high power amplifications.
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