2N7002W 数据手册 ( 数据表 ) - PANJIT INTERNATIONAL
生产厂家

PANJIT INTERNATIONAL
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=5Ω
• RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• In compliance with EU RoHS 2002/95/EC directives
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated.
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated.
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Zetex => Diodes
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated.
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated.
60V N-CHANNEL ENHANCEMENT MODE MOSFET ( Rev : 2009 )
Diodes Incorporated.
60V N-CHANNEL ENHANCEMENT MODE MOSFET ( Rev : 2010 )
Diodes Incorporated.
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated.
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated.
60V N-CHANNEL ENHANCEMENT MODE MOSFET ( Rev : 2010 )
Diodes Incorporated.