STGD3NB60SD(2000) 查看數據表（PDF） - STMicroelectronics
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STGD3NB60SD Datasheet PDF : 8 Pages
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STGD3NB60SD
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Max
Max
Typ
3.125
100
1.5
oC/W
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified)
OFF
Symbol
Parameter
VBR(CES) Collector-Emitter
Breakdown Voltage
ICES
Collector cut-off
(VGE = 0)
IGES
Gate-Emitter Leakage
Current (VCE = 0)
Test Conditions
IC = 250 µA VGE = 0
VCE = Max Rating
VCE = Max Rating
VGE = ± 20 V
Tj = 25 oC
Tj = 125 oC
VCE = 0
Min.
600
Typ.
Max.
Unit
V
10
µA
100 µA
± 100 nA
ON (∗)
Symbol
VGE(th)
VCE(SAT)
Parameter
Gate Threshold
Voltage
Collector-Emitter
Saturation Voltage
Test Conditions
VCE = VGE IC = 250 µA
Min.
2.5
Typ.
Max.
5
Unit
V
VGE = 15 V
VGE = 15 V
VGE = 15 V
IC = 1.5 A
IC = 3 A
IC = 3 A Tj = 125 oC
1
V
1.2 1.5
V
1.1
V
DYNAMIC
Symbol
gfs
Cies
Coes
Cres
QG
QGE
QGC
ICL
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Latching Current
Test Conditions
VCE =25 V
IC = 3 A
VCE = 25 V f = 1 MHz VGE = 0
VCE = 480 V IC = 3 A VGE = 15 V
Vclamp = 480 V RG=1kΩ
Tj = 150 oC
Min.
1.7
12
Typ.
2.5
255
30
5.6
18
5.4
5.5
Max.
330
40
7
Unit
S
pF
pF
pF
nC
nC
nC
A
SWITCHING ON
Symbol
td(on)
tr
(di/dt)on
Eon
Parameter
Delay Time
Rise Time
Turn-on Current Slope
Turn-on Switching
Losses
Test Conditions
VCC = 480 V
VGE= 15 V
IC = 3 A
RG = 1kΩ
VCC = 480 V
RG = 1kΩ
Tj = 125 oC
IC = 3 A
VGE = 15 V
Min.
Typ.
125
150
50
Max.
1100
Unit
ns
ns
A/µs
µJ
2/8
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